February 29, 2012, Seoul, Korea — In response to growing demand for cost-effective RF power solutions capable of supporting exponentially increasing data rates, diverse wireless standards, and growing network complexity, Freescale Semiconductor (NYSE: FSL, www.freescale.com ) announced the first two products in its advanced Airfast RF power portfolio. These new products are designed to deliver industry-leading power density, signal bandwidth, linear efficiency, and gain in cost-effective, small-size configurations.
"As global wireless networks become increasingly complex, the requirements of the RF power market are also becoming more complex," said Ritu Favre, General Manager of Freescale's RF business unit. "Diverse modulation formats, expanding bandwidths, and shrinking specifications have necessitated a more comprehensive, system-level approach to RF power technology. Freescale's latest Airfast product family was designed with this paradigm shift in mind."
The new AFT09VP350N is the industry's first 48V LDMOS transistor designed exclusively for mixed-carrier GSM and mixed-standard macrocell applications operating in the 720 to 960 MHz frequency band. When used in a Doherty configuration, this device provides a peak output of 57 dBm (500 W) in a single transistor package, which is nearly double that of other LDMOS solutions with a similar footprint. In contrast, most 40W to 60W power transmitters currently in common use require two or three separate packaged devices to provide this level of peak output.
In a Doherty circuit designed for the 920–960 MHz band, the AFT09VP350N provides 50% efficiency and over 19 dB of gain at an average output of 50 dBm (100 W), while satisfying linearity specifications after strict compound carrier GSM correction. This efficiency is further enhanced by Freescale’s cost-effective over-molded plastic OMNI package, which boasts extremely low thermal resistance. The AFT09VP350N also provides an instantaneous signal bandwidth capacity of up to 100 MHz, with a 50% reduction in device drain-source capacitance measured per watt.
At the opposite end of the power and frequency spectrum in the new Airfast product family is the 28V AFT26HW050GS LDMOS transistor. This product is designed exclusively for wide-band instantaneous bandwidth micro/macro cell LTE applications between 2500 and 2700 MHz. Similar to the AFT09VP350N, the AFT26HW050GS also contains two discrete matched transistors in a Doherty-compatible configuration within a single package. The AFT26HW050GS provides 48% efficiency based on a peak output of 47 dBm (50 W), a Doherty gain of over 15.5 dB, and an average output of 39 dBm (8 W) in a Doherty circuit designed for the 2620 to 2690 MHz band. Under these conditions, the device provides a DPD correction of -54 dBc when using a 20 MHz LTE test signal. Based on 5W to 7W transmitters, this represents a 7-point increase in efficiency compared to previous generation Freescale LDMOS solutions and is the industry's best semiconductor Doherty efficiency reported to date at that frequency. Along with high gain and efficiency, the AFT26HW050GS also supports instantaneous signal bandwidths of over 100MHz. In addition, since this device is supplied in an easy-to-manufacture surface-mount air-cavity package, it can be mounted on an embedded coin or a simple via array to provide thermal and electrical grounding.
System-level approach to next-generation RF power products
Airfast RF power solutions are designed to address the challenges of increasing efficiency, peak output, and signal bandwidth while responding to continuous pressure for cost reduction. Since the latest Airfast devices offer two to three times more bandwidth than previous generations, OEMs can develop broadband composite standard amplifiers while streamlining their product portfolios and reducing system costs.
In particular, by leveraging the cost-effectiveness of the 48V technology used in the AFT09VP350N, OEMs can develop next-generation transmitters with significantly fewer components. This reduction in component count, coupled with the supply of low-thermal-resistance plastic packages, allows for a decrease in the size and cost of power amplifiers, enabling the supply of smaller and lighter RRHs (Remote Radio Heads) to wireless network operators. The AFT26HW050GS also optimizes cost-effectiveness through an easy-to-manufacture surface-mount hollow package. With this configuration and significantly improved efficiency, there is no need to use expensive copper plates or coins, thereby lowering weight and system costs. Consequently, smaller, lighter, and highly cost-effective wireless solutions can be realized.

Price and supply situation
The AFT09VP350N and AFT26HW050GS are scheduled to be available in the second quarter of 2012 along with reference designs and other support tools, along with general samples. Information regarding samples and pricing can be obtained by contacting your local Freescale sales office. Additional devices supporting various cellular bands and output levels are scheduled to be announced during 2012. More information about Freescale RF Power LDMOS solutions can be found at www.freescale.com/RFpower .