Reduces board space and cuts material costs in industrial motor drives, power supplies, and more

STMicroelectronics has launched the PWD13F60 SiP (System-in-Package) in a 13 x 11mm size, integrating a complete 600V/8A single-phase MOSFET full bridge.

This device reduces board space and cuts material costs in industrial motor drives, lamp ballasts, power supplies, converters, and inverters.

The PWD13F60 has a 60% smaller footprint compared to other equivalent circuits implemented with discrete components, enabling improved power density in the final application. Integrating four power MOSFETs, it is a unique solution that efficiently replaces common dual-FET half-bridge or 6-FET three-phase modules currently supplied to the market.

Instead of these integrated functions, a single-phase full-bridge can also be implemented using only the PWD13F60 without using internal MOSFETs. This module can be flexibly configured as either one full-bridge or two half-bridges.

The PWD13F60, utilizing ST's high-voltage BCD6s-Offline manufacturing process, integrates a gate driver for power MOSFETs and bootstrap diodes required for high-side driving, eliminating the need for external components, simplifying board design and enabling easy assembly implementation.

This gate driver is optimized for stable switching and low EMI (Electromagnetic Interference). Additionally, the SiP features cross-conduction protection and UVLO (Under-Voltage Lockout) to ensure system safety while minimizing footprint.

Furthermore, the PWD13F60's wide driving voltage range up to 6.5V simplifies design and maximizes flexibility. The SiP input can also accept logic signals from 3.3V to 15V, enabling convenient interfacing with microcontrollers (MCU) and DSP (Digital Signal Processor), or Hall sensors.