Designers of applications such as ultrabooks and laptops face the challenge of reducing inductor height in power supply designs to achieve thinner final systems. Fairchild Semiconductor (NYSE: FCS)’s FDMF6708N 2nd Generation XS™ DrMOS family is an integrated MOSFET + driver power stage solution fully optimized for high-current, high-frequency synchronous buck DC-DC applications. The FDMF6708N integrates a driver IC, two power MOSFETs, and bootstrap Schottky diodes in a thermally enhanced 6mm x 6mm PQFN Intel® DrMOS v4.0 standard package.

The FDMF6708N provides high switching frequencies and high power density while reducing footprint by 50 percent. Additionally, this device utilizes Zero Cross Detect (ZCD) functionality to improve lightweight load efficiency, thereby extending battery life. Furthermore, unlike conventional discrete solutions, this device achieves high efficiency under full load using the latest Control FET and SyncFET™ technologies, and enables reduced source inductance through clip-bond packaging. Conventional discrete solutions require more PCB space, longer layout traces, higher inductance, and more components, and the high frequencies required to use low-profile magnetic components result in reduced thermal performance.

The FDMF6708N device, available in a PQFN 6mm x 6mm package, offers 2.5 percent better efficiency at peak load (15A) and 6 percent better efficiency at full load (30A) compared to the closest competitor product. This device can be used in applications requiring switching frequencies of 600KHz to 1.0MHz, even with a 20V input voltage. Therefore, designers can use smaller, lower-profile inductors and capacitors, which not only reduces the size of the solution but also improves thermal performance. By utilizing the FDMF6708N device, it will be possible to realize ultrabooks that are even better cooled, thinner, and more energy-efficient.

More details about this device product or to order samples can be found at http://www.fairchildsemi.com/pf/FD/FDMF6708N.html .

Key Features and Benefits

• Since switching frequencies of 1.0 MHz or higher are possible, the overall solution size can be reduced, saving up to 50 percent of board space, and by lowering the inductor height, an even thinner system can be achieved.

• The Zero Cross Detect (ZCD) circuit is adopted to improve lightweight load efficiency.

• Multi-source solution multi-chip module in PQFN 6mm x 6mm Intel® DrMOS v4.0 standard footprint

• Compared to the closest competitor product, the efficiency at peak load (15A) is 2.5 percent better and the efficiency at full load (30A, 19Vin, 1Vout, 800KHz) is 6 percent better, so battery life can be extended.

Fairchild Semiconductor's second-generation XS™ DrMOS series will provide advanced technology capable of meeting the high energy efficiency and form factor requirements of today's designs. Along with the second-generation XS DrMOS devices, Fairchild provides a comprehensive range of energy-efficient power analog, power discrete, and optoelectronic component solutions to maximize energy savings in power-sensitive applications.

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Price: $1.86 per unit for a quantity of 1,000

Supply: Sample orders currently available

Delivery time: 8–12 weeks after order receipt