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TI Adds High-Speed GaN Driver to GaN Power Product Family

Google 우선 소스Published2018.03.12 10:44
Efficient for speed-critical applications

TI announced that it is adding two new high-speed GaN FET driver products to its industry-leading gallium nitride (GaN) power product portfolio.

These new products enable more efficient and high-performance designs in speed-critical applications such as LIDAR or 5G RF envelope tracking. The LMG1020 and LMG1210 enable a 50 MHz switching frequency, improve efficiency, and achieve a solution size five times smaller than that possible with silicon MOSFETs.

The LMG1020 60MHz low-side GaN driver features the industry's best driving speed and a minimum pulse width of 1ns, enabling high-precision lasers in industrial LiDAR applications. Additionally, by utilizing a miniaturized WCSP (wafer-level chip-scale) package measuring only 0.8mm x 1.2mm, it minimizes gate loop parasitism and losses, thereby further enhancing efficiency.

The LMG1210 is a 50MHz half-bridge driver designed for use with GaN FETs up to 200V. It features adjustable dead-time control, improving efficiency by up to 5% in high-speed DC/DC converters, motor drives, Class D audio amplifiers, and other power conversion applications. In addition, it provides industry-leading CMTI (Common Mode Transient Immune) performance of over 300 V/ns, enabling designers to achieve high system noise immunity.

These devices can achieve power solutions 50 times faster than silicon drivers with ultra-fast propagation delays (2.5ns for the LMG1020 and 10ns for the LMG1210). In addition, the LMG1020 can provide high-power 1ns laser pulses, enabling long-range LIDAR applications.

High-efficiency designs are also possible. The LMG1210 improves efficiency by up to 5% by providing a low switch node capacitance of 1pF and user-adjustable dead time control. Since dead time is controllable, the LMG1210 allows for a reduction in the number of required components while increasing efficiency. Consequently, developers can reduce the size of the power supply by up to 80%. The enhanced power density of the LMG1020 enables the highest resolution for LiDAR applications in the industry's smallest package.

The LMG1020 and LMG1210 are new additions to TI's GaN power product family, which offers the industry's most diverse configurations ranging from 200V drivers to 80V and 600V power stage products. By undergoing over 10 million hours of GaN process reliability testing, TI meets the demand for reliable and easy-to-use GaN products, applying decades of experience and technical expertise in silicon manufacturing to GaN technology.
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