Samsung Electronics Breaks Ground on Second Line at Xi'an Semiconductor Facility in China
Published2018.03.28 11:01Samsung Electronics will construct a second production line at its Xi'an semiconductor facility in China to respond to increasing 3D V-NAND demand.
On March 28 morning, Samsung Electronics held a groundbreaking ceremony for "Samsung China Semiconductor Memory Line 2" in Xi'an, Shaanxi Province, China, attended by Hu Heping, Communist Party Secretary of Shaanxi Province, Miao Wei, Minister of Industry and Information Technology, Liu Guozhong, Governor of Shaanxi Province, Noh Young-min, Korean Ambassador to China, Lee Kang-kook, Consul General in Xi'an, and Kim Ki-nam, President and Representative Director of Samsung Electronics, among others.
In August 2017, Samsung Electronics signed an MOU with the Shaanxi Province government for investment in the Xi'an semiconductor Line 2 facility and committed to investing a total of $7 billion over the next three years.
Through this development, Samsung Electronics plans to establish a second semiconductor production line in Xi'an to actively respond to global IT market demand for NAND flash (V-NAND).
Samsung Electronics President Kim Ki-nam stated in his commemorative address, "Through successful operation of the Xi'an Line 2 facility, we will produce the highest-quality memory semiconductor products and provide differentiated solutions to customers, continuing to contribute to global IT market growth."
In particular, through this additional Line 2 investment, the company expects to further strengthen manufacturing competitiveness in the Chinese market, which is both the largest demand center for NAND flash and where global mobile and IT manufacturers concentrate their production facilities, and to respond more smoothly to Chinese market requirements.
Additionally, this additional investment is expected to bring positive ripple effects to the regional economy of Xi'an and Shaanxi Province as well as to China's western industrial development. Samsung Electronics' Xi'an semiconductor facility has been pursuing steady investment starting with the Line 1 groundbreaking ceremony in 2012, followed by establishment of an electronics research institute in 2013, mass production of first-generation V-NAND in 2014, completion of backend process line in 2015, and expansion of Line 2 in 2018.
Related news
Samsung Electronics and Qualcomm Partner to Produce 5G Chips Based on 7nm Foundry Process
Samsung Electronics has decided to cooperate with Qualcomm on 5G chip production based on the 7-nanometer foundry process (7LPP, Low Power Plus). Samsung Electronics plans to apply EUV (Extreme Ultra Violet), the next-generation lithography equipment, starting from the 7-nanometer process, and Samsung Electronics and Qualcomm have decided to expand their cooperative relationship to 7-nanometer following their collaboration on 14-nanometer/10-nanometer processes. Samsung Electronics is actively adopting EUV technology, including unveiling a 7-nanometer foundry process incorporating EUV lithography technology last May, and plans to continue overcoming the limits of ultra-fine processes to solidify its technological leadership.
2018.02.22by 김지혜 기자
Samsung Electronics Expands New 8-Inch Foundry Solutions
Samsung Electronics is expanding its foundry solutions utilizing 8-inch (200mm) wafers to strengthen customer support. Samsung Electronics plans to expand its 8-inch foundry service product lineup from the existing 4 types to 6 types, and provide specialized fine process solutions ranging from 180 nanometers to 65 nanometers for each product to enhance customers' product completeness and convenience.
2018.03.21by 김지혜 기자
Samsung Electronics Announces 'Exynos 7 (9610)' with Enhanced Deep Learning and Image Processing Capabilities
Samsung Electronics announced a new Exynos 7 series processor (Exynos 7 9610) with enhanced deep learning and image processing capabilities. Samsung Electronics has applied the same 10-nanometer FinFET process used in the premium AP Exynos 9 series (9810) to the semi-premium AP 'Exynos 7 (9610)' and equipped it with cutting-edge technologies such as deep learning-based image processing functions, thereby strengthening competitiveness and expanding customer choices. In particular, the processor is characterized by significantly enhanced image processing capabilities in line with recent smartphone trends that focus on camera functions and multimedia utilization.
2018.03.22by 김지혜 기자
Intel Unveils Next-Generation 'Core Ultra Series 3' and vPro Platform for Enterprise PCs
Intel has officially unveiled the "Intel Core Ultra Series 3" for next-generation enterprise PCs and the latest vPro platform, addressing a wide range of demands from enterprise notebooks to high-performance workstations.
2026.03.26by 배종인 기자
ROHM Launches ESD Protection Diode Compatible with High-Speed Interfaces of 10Gbps or Higher
Semiconductor specialist ROHM has developed the 'RESDxVx series' of ESD (electrostatic discharge) protection diodes capable of responding to next-generation high-speed data communication environments exceeding 10Gbps, simultaneously enhancing both signal quality maintenance required in high-speed interfaces and IC protection performance.
2026.03.26by 배종인 기자
