NXP Launches Ultra-compact Power Management Solution for Mobile Devices

Integrated Low VCEsat transistors and Trench MOSFETs into a 2x2mm ultra-small lead-free package

August 11, 2011, Seoul – NXP Semiconductor (NASDAQ: NXPI) today announced the PBSM5240PF, which integrates an ultra-small medium-power transistor and an N-channel Trench MOSFET in a leadless DFN2020-6 (SOT1118) plastic package. Measuring 2x2mm with a height of only 0.65mm, the DFN2020-6 (SOT1118) is designed to keep pace with the industry trend of miniaturization in high-performance consumer devices, such as mobile devices.

The PBSM5240PF, one of the first power management solutions to integrate two products—a low VCE(sat) BISS transistor and a Trench MOSFET—into a single unit, saves PCB space while demonstrating high electrical performance.

Compared to existing solutions that required two packages for BISS (Breakthrough in Small Signal)/MOSFET solutions, the PBSM5240PF reduces the space occupied by more than 50% and the package height by more than 10%. In addition, by improving thermal efficiency by 25% through the heatsink included in the DFN2020-6 (SOT1118) package, the current was increased to 2A and power consumption was reduced.

The PBSM5240PF is used in the charging circuits of batteries for portable devices such as mobile phones and MP3 players. It is also used in load switches or battery-based devices that require high current generation with best-in-class thermal efficiency while using minimal space.

Recommendation
“The uniqueness and appeal of BISS/MOSFET solutions in the mobile device industry lie in their small footprint and superior power and thermal efficiency in leadless packages. This integrated package, operating up to 40 volts, is ideal for today’s ultra-compact mobile devices where height and board space are major design constraints and every millimeter must be reduced.” (Joachim Stange, Product Manager, NXP Semiconductors)

Technical details
The key features of the PBSM5240PF BISS transistor and N-channel Trench MOSFET are as follows.
• High collector current capability IC and ICM
• High collector current gain (hFE) at high IC
• Achieve high energy efficiency through reduced heat generation
• Very low collector-emitter saturation voltage VCEsat
• Reduction in Printed-Circuit Board (PCB) area required for the 2x2mm DFN2020-6 package

Purchase Information
The NXP PBSM5240PF Breakthrough in Small Signal (BISS) transistor and N-channel Trench MOSFET are available immediately through major distributors worldwide.

Related links
• Leaflet about the NXP PBSM5240PF BISS/MOSFET solution
• Data sheet about the PBSM5240PF
• NXP's complete range of Low V_CEsat (BISS) transistors
• NXP MOSFETs