NXP Semiconductors has expanded its portfolio of gallium nitride (GaN) and silicon-LDMOS technologies for 5G networks. These products deliver industry-leading performance in a compact footprint, making them ideal for enabling next-generation 5G cellular networks.

Elements enabling 5G connectivity include spectrum expansion, higher-order modulation, carrier aggregation, and full-dimensional beamforming. These elements require an expanded technology foundation to support enhanced mobile broadband connectivity.

NXP's high-power RF products for 5G networks

In addition to spectrum usage and network footprint, multiple-input, multiple-output (MIMO) technology is being used, ranging from four transmit antennas (TX) to 64 TX and beyond. The future of 5G networks hinges on GaN and Si-LDMOS technologies, and NXP is at the forefront of RF power amplifier development.

“NXP has been a leader in LDMOS for 25 years, having introduced our first LDMOS product in 1992,” said Paul Hart, senior vice president and general manager of NXP’s RF Power business unit. NXP's GaN technology has been developed with the highest linear efficiency for cellular applications.

“With this industry-leading GaN technology, NXP is expanding its LDMOS footprint. With a leading supply chain, global application support, and unparalleled design expertise, NXP will be the leading RF partner for 5G solutions,” he said.

NXP showcases new RF GaN wideband power transistors and expands its Airfast 3rd generation Si-LDMOS portfolio for macro and outdoor small cell solutions at IMS 2018. The newly launched products are as follows:

• A3G22H400-04S: A GaN product suitable for 40W base stations, it delivers up to 56.6% efficiency and 15.4 dB gain, and supports cellular bands from 1800 MHz to 2000 MHz.

• A3G35H100-04S: GaN product that provides 43.8% efficiency and 14dB gain, enabling a 16TX MIMO solution at 3.5GHz.

• A3T18H400W23S: This Si-LDMOS product provides a path to 5G at 1.8GHz with Doherty efficiency of up to 53.4% and 17.1dB gain.

• A3T21H456W23S: Supporting the entire 90MHz band from 2.11GHz to 2.2GHz, this solution demonstrates NXP’s best-in-class Si-LDMOS performance in terms of efficiency, RF power, and signal bandwidth.

• A3I20D040WN: Part of NXP's integrated ultra-wideband LDMOS family, this solution delivers 365 MHz wideband Class AB performance with 32 dB gain and 46.5 dBm peak power at 10 dB OBO with 18% efficiency.

• A2I09VD030N: This product offers Class AB performance with 34.5dB gain and 10dB It boasts excellent performance, delivering 46 dBm peak power with 20% efficiency at OBO. The product has an RF bandwidth of 575 MHz to 960 MHz.