Infineon Technologies has launched the new 1200V TRENCHSTOP IGBT6. This product family consists of discrete IGBT duopacks (with integrated freewheeling diodes) produced on 12-inch wafers, designed to meet customer demands for high efficiency and high power density. The IGBT6 is optimized for hard-switching and resonant topologies operating at switching frequencies of 15 kHz to 40 kHz, and key applications include uninterruptible power supplies (UPS), solar inverters, battery chargers, and energy storage.

The IGBT6 is released in two product families. The S6 series offers the best trade-off between low conduction losses and low switching losses, with a VCE(sat) of 1.85V. The H6 series is optimized for low switching losses. Application tests show that replacing the previous Highspeed3 IGBT with the new IGBT6 S6 series achieves a 0.2% efficiency improvement. Additionally, the Positive Temperature Coefficient (PTC) allows for easy and stable parallel connection of devices. Furthermore, the Rg (gate resistance) control function enables the IGBT's switching speed to be adjusted to meet application requirements.