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High-efficiency design for speed-critical applications
Propagation delay time 2.5ns, minimum pulse width 1ns
Overtemperature protection and undervoltage lockout features
Texas Instruments GaN Driver LMG1020
Mouser Electronics supplies the gallium nitride (GaN) driver LMG1020 from Texas Instruments. The LMG1020, a single low-side driver, enables high-efficiency, high-performance designs in speed-critical applications such as LiDAR, ToF laser drivers, facial recognition, augmented reality, and Class E wireless chargers.
The TI LMG1020 low-side GaN driver supplied by Mouser drives GaN FETs and logic-level MOSFETs with a propagation delay time of just 2.5ns and a minimum pulse width of 1ns.
By connecting external resistors between gate and OUTH, and between gate and OUTL respectively, the drive strength can be individually adjusted to the pull-up and pull-down edges.
The LMG1020 driver features overtemperature protection and undervoltage lockout to protect against overload and fault conditions. It has common-mode transient immunity greater than 300V/ns and provides a high level of system noise immunity.
The LMG1020 is produced in a 0.8×1.2mm WCSP package to minimize gate loop parasitic inductance and maximize power density in high-frequency applications. As a compact device, designers can reduce component count and reduce power supply requirements by up to 80%.
The LMG1020 driver features dead-time adjustment control capability, providing enhanced efficiency in applications such as DC-DC converters, Class D audio amplifiers, and motor drives.
Propagation delay time 2.5ns, minimum pulse width 1ns
Overtemperature protection and undervoltage lockout features

Texas Instruments GaN Driver LMG1020
Mouser Electronics supplies the gallium nitride (GaN) driver LMG1020 from Texas Instruments. The LMG1020, a single low-side driver, enables high-efficiency, high-performance designs in speed-critical applications such as LiDAR, ToF laser drivers, facial recognition, augmented reality, and Class E wireless chargers.
The TI LMG1020 low-side GaN driver supplied by Mouser drives GaN FETs and logic-level MOSFETs with a propagation delay time of just 2.5ns and a minimum pulse width of 1ns.
By connecting external resistors between gate and OUTH, and between gate and OUTL respectively, the drive strength can be individually adjusted to the pull-up and pull-down edges.
The LMG1020 driver features overtemperature protection and undervoltage lockout to protect against overload and fault conditions. It has common-mode transient immunity greater than 300V/ns and provides a high level of system noise immunity.
The LMG1020 is produced in a 0.8×1.2mm WCSP package to minimize gate loop parasitic inductance and maximize power density in high-frequency applications. As a compact device, designers can reduce component count and reduce power supply requirements by up to 80%.
The LMG1020 driver features dead-time adjustment control capability, providing enhanced efficiency in applications such as DC-DC converters, Class D audio amplifiers, and motor drives.
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