After 20 million hours of device reliability testing
High-voltage GaN FET with integrated driver and protection functions
Double the power density for industrial and communications applications

Texas Instruments (TI) today introduced a new portfolio of ready-to-use 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages capable of supporting applications up to 10 kW.

The LMG341x family enables developers to create designs that are smaller, more efficient, and higher performing than silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, communications, and personal electronics applications.
TI's family of GaN FET devices provides an intelligent alternative to traditional cascaded and standalone GaN FETs by integrating unique features and protection capabilities to simplify high-voltage power supply design while increasing system reliability and optimizing performance. These products integrate sub-100ns current limiting and overtemperature detection to protect the device from unintended shoot-through events, prevent thermal runaway, and provide self-monitoring capabilities through system interface signals.

Key features and benefits of the LMG3410R050, LMG3410R070, and LMG3411R070 include:

First, TI's integrated GaN power stage doubles power density and reduces losses by 80% compared to silicon MOSFETs. Each device supports a fast 1MHz switching frequency and a slew rate of up to 100V/ns.

Next, system reliability is excellent. This portfolio has been verified through 20 million hours of device reliability testing, including accelerated testing and in-application hard switch testing. Additionally, each device integrates thermal and high-speed, 100ns overcurrent protection against shoot-through and short-circuit conditions.

Finally, there are devices suitable for all power levels. Each device in the portfolio integrates a 50mΩ or 70mΩ GaN FET, driver, and protection functions, providing a single-chip solution for applications from sub-100W to 10kW.

TI will demonstrate a 10kW cloud-enabled grid link at electronica 2018, held November 13-16 in Munich, Germany. The demonstration, jointly developed and presented by TI and Siemens, uses TI's LMG3410R050 600-V GaN FET with integrated driver and protection functions to achieve 99 percent efficiency and reduce power component size by up to 30 percent compared to conventional silicon designs.

These products are available in an 8 mm x 8 mm split pad, quad flat no-lead (QFN) package and are available now from the TI store.