Infineon provides Si, SiC, and GaN power technologies
CoolGaN 600V, Fast Turn-on/Turn-off Optimized
IceDRIVER, protects GaN switches from turn-on

Infineon Technologies announced on the 20th that it is launching its gallium nitride (GaN) solution CoolGaN 600V e-mode HEMT and GaN EiceDRIVER IC products.
These products, which provide higher power density, enable smaller and lighter designs, thereby lowering system and operating costs. With the launch of the CoolGaN 600V e-mode (enhancement mode) HEMT and GaN EiceDRIVER gate driver ICs, Infineon now offers all power technologies across silicon (Si), silicon carbide (SiC), and GaN.

CoolGaN 600V e-mode HEMT
The CoolGaN 600V e-mode HEMT is designed with a reliable 'normally-off' concept and is optimized for fast turn-on and turn-off. It enables high efficiency and power density of SMPS and provides the best figures of merit among all currently released 600V devices.

CoolGaN switches, which have low gate charge and excellent dynamic performance during reverse conduction, enable high-frequency operation and improve power density by reducing the size of passive components.
CoolGaN 600V e-mode HEMT achieves the best PFC efficiency (over 99.3 percent with 2.5 kW PFC) and much higher density with the same efficiency (over 160 W/in³ with over 98 percent efficiency with 3.6 kW LLC). Linear output capacitance can reduce dead time in resonant topologies by 8 to 10 times.

The CoolGaN 600V switch is available in 70mΩ and 190mΩ SMD packages and features excellent thermal performance and low parasitic components. Available in various SMD packages, it supports high-frequency operation in applications such as enterprise and hyperscale data center servers, telecom rectifiers, adapters, chargers, SMPS, and wireless charging.

GaN Ice Driver IC
Infineon's IceDriver ICs 1EDF5673K, 1EDF5673F, and 1EDS5663H are suitable for use with CoolGaN e-mode HEMTs. These products are developed to ensure CoolGaN switch operation, minimizing customer development work and reducing time-to-market.

Unlike gate driver ICs for power MOSFETs, Infineon's dedicated CoolGaN gate driver IC provides a negative output voltage to quickly turn off the GaN switch. During the time interval for turning off the switch, the GaN IceDriver IC reliably maintains the gate voltage at 0. Therefore, it protects the GaN switch from excessive turn-on (even for the first pulse), which is essential for SMPS operation.

GaN gate driver ICs maintain a constant GaN HEMT switching slew rate regardless of the duty cycle or switching speed. This enables robust operation and high power efficiency, while reducing development time. Integrating galvanic isolation to enhance robustness for hard and soft switching applications, GaN gate driver ICs provide protection between the primary and secondary sides of SMPS, as well as between the power and logic stages.

The GaN IceDRIVER 1EDF5673K is available in a 13-pin LGA 5mm x 5mm package, the 1EDF5673F in a 16-pin DSO 15 mil package, and the 1EDS5663H in a 16-pin DSO 300 mil package.

CoolGaN 600V e-mode HEMT is now available for supply, and silicon-based GaN EiceDRIVER ICs are available for pre-order.