Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has unveiled the CoolGaN™ G5 series of industrial-grade GaN (gallium nitride) power transistors with integrated Schottky diodes, the industry's first, demonstrating new technologies to reduce power system design complexity and maximize efficiency.

The newly announced CoolGaN G5 transistors are designed to reduce unnecessary deadtime losses in medium-voltage applications and enable efficient power systems.

Existing GaN technologies have been limited in efficiency by power losses due to higher effective body diode voltage (VSD) and controller deadtime issues.

To solve this, designers had to add external Schottky diodes or modify the controller, which was inefficient and required additional time and cost.

CoolGaN G5 transistors integrate Schottky diodes to eliminate these design complexities and are suitable for a wide range of applications including IBCs for servers and telecom, DC-DC converters, USB-C battery chargers, high-power power supplies (PSUs), and motor drives.

In particular, it overcomes the limitation of reverse conduction voltage (VRC), which is a unique design constraint of GaN transistors, and provides design flexibility.

This product provides optimal performance by reducing reverse conduction loss and expanding compatibility with high-side gate drivers. Implement the design.

The first product is a 100 V, 1.5 mΩ GaN transistor, housed in a 3x5 mm PQFN package.

This ultra-compact design increases power density and reduces system size and weight, making it ideal for high-performance power devices.

Additionally, the integrated Schottky diode improves compatibility with the controller, reducing additional design costs and reducing bill of materials (BOM) costs.

Infineon emphasized that “the CoolGaN G5 series is a product focused on reducing the complexity of power electronics design and maximizing efficiency and performance,” and that “it will lead an innovative change in the industrial power electronics market.”