| Combines DRAM speed with flash non-volatility advantages
| Achieves chip miniaturization by embedding MRAM in SoC
| Simple design structure significantly reduces production costs

Samsung Electronics on the 6th shipped eMRAM (embedded MRAM) solution products based on 28nm FD-SOI process.

FD-SOI (Fully Depleted-Silicon on Insulator) process is a process that can reduce leakage current by coating an insulating layer over a silicon wafer.

MRAM (Magnetic Random Access Memory) is a memory semiconductor with the characteristic of being non-volatile (data is retained even when power is off) while having speed comparable to DRAM. With these two technologies combined, a next-generation embedded memory has been created that consumes less power, has very fast speed, is easy to miniaturize, and is also inexpensive.
Samsung Electronics' Foundry Business Division has strengthened its technology leadership in the foundry field by combining this product with SoC.

Embedded memory is a memory module that plays a role in information storage in system semiconductors such as MCU or SoC used in small electronic products like IoT devices. Primarily eFlash (embedded Flash Memory) based on flash technology is used.

However, eFlash has disadvantages in terms of speed and power efficiency because it goes through a process of deleting existing data that was previously stored when recording data.

Samsung Electronics' eMRAM solution based on 28nm FD-SOI process does not require deletion when recording data, and implements write speed approximately 1000 times faster than existing eFlash.

It also has non-volatile characteristics, maintaining stored data in a power-off state without consuming standby power, and the operating voltage required for data recording is also lower, providing good power efficiency.

Samsung Electronics' eMRAM solution has a simple structure, so it can be implemented by adding only minimal layers to existing logic process-based designs, thereby reducing design burden for customers and lowering production costs.

Meanwhile, Samsung Electronics will hold an event on the 6th at Giheung Campus to commemorate the first shipment of mass-produced eMRAM products based on 28nm FD-SOI process.

Samsung Electronics' strategy is to continuously expand embedded memory solutions by starting 1Gb eMRAM test chip production within this year, thereby securing differentiated foundry competitiveness.

Sang-hyun Lee, Executive Director of Strategic Marketing Team at Samsung Electronics Foundry Business Division, stated, "We have overcome difficulties in utilizing new materials and have presented a next-generation embedded memory solution," and added, "By expanding eMRAM application to Samsung's verified foundry logic process and providing differentiated competitiveness and excellent productivity, we will respond to customer and market demands."