Launch of 10 AEC-Q101 Compliant SiC MOSFETs
Automotive-ready design with trench gate structure
ROHM Builds 34 SiC SBD and MOSFET Product Lineups

While electric vehicles (EVs) are becoming increasingly widespread, their short range has emerged as a major challenge. To extend EV range, the capacity of their onboard batteries must be increased, which also necessitates shorter charging times.
To achieve this, high-power, high-efficiency vehicle chargers (e.g., 11 kW, 22 kW) are required. Therefore, the adoption of SiC MOSFETs is increasing. In addition, with the trend toward higher voltages (800V) for onboard batteries, particularly in Europe, the need for high-voltage, low-loss power devices is increasing.
ROHM announced on the 14th that it has added 10 new products to its "SCT3xxxxxHR Series" of SiC MOSFETs that comply with the automotive reliability standard AEC-Q101 for use in vehicle chargers and DC/DC converters to meet these market demands.
The 10 newly added products are automotive-grade SiC MOSFETs that employ a trench gate structure, and mass production began in December 2018 with a monthly production capacity of 500,000 units.

With this lineup expansion, ROHM now offers a total of 34 products, including SiC SBDs and SiC MOSFETs.
Meanwhile, since its founding, ROHM has maintained "Quality First" as its corporate goal and has adopted a "vertically integrated" system, consistently implementing everything from development to manufacturing within the group. This system not only ensures high quality across all processes, but also ensures reliable traceability and an optimized supply chain.