ST Launches 650V High-Frequency IGBT Utilizing TFS Technology
Published2019.05.04 07:01Excellent conductivity performance due to low saturation voltage of 1.55V
On the 2nd, STMicroelectronics launched the 650V IGBT Series HB2, which utilizes ST's latest Trench Field Stop (TFS) technology to improve efficiency and performance in mid-to-high speed applications such as PFC converters, welders, uninterruptible power supplies (UPS), and solar inverters. This series also includes automotive-grade devices that meet AEC-Q101 Rev. D certification.
The HB2 series, a new addition to the STPOWER portfolio, offers excellent conductivity performance due to its low saturation voltage (VCEsat) of 1.55V. In addition, dynamic behavior is enhanced by reduced gate charge, which supports rapid switching at low gate currents. Its excellent thermal performance maximizes stability and power density.
The HB2 series IGBTs can be selected from full-rated or half-rated diodes or protection diodes to prevent accidental reverse bias, allowing for the optimization of operation for specific applications.
The 40A STGWA40HP65FB2, the first of the new 650V devices released, is available in a TO-247 LL (Long-Lead) package and is priced starting at $2.95 per 1,000 units.
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