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Onsemi and GTAT Join Forces to Produce and Supply SiC Materials
Published2020.03.18 09:41Semiconductor growth for power electronics applications is expected to be a cornerstone.
ON Semiconductor has signed a five-year agreement with GT Advanced Technology (GTAT) for the production and supply of silicon carbide (SiC) materials.
The agreement, valued at approximately $50 million, will see GTAT produce and supply ON Semiconductor with CrysTX SiC material for high-growth markets and applications.
▲ ON Semiconductor signed a contract with GTAT for the production and supply of SiC materials.
High-growth applications such as electric vehicle (EV) traction systems, hybrid and plug-in EVs, solar and energy storage, and EV charging require a stable supply of high-quality, cost-competitive SiC materials.
ON Semiconductor plans to produce SiC wafers using GTAT's proprietary 150mm SiC crystals, strengthening its role as a vertically integrated supplier within the SiC supply chain and maintaining a world-class supply chain.
“Combining ON Semiconductor’s 40 years of high-volume wafer production experience with GTAT’s expertise and rapid advancements in SiC crystal growth will enable us to build a scalable supply chain for the dynamic high-power wide bandgap market,” said Brent Wilson, senior vice president of global supply chain at ON Semiconductor.“We will continue to advance SiC wide-bandgap material technology through collaboration with GTAT,” he said.
“We are pleased to partner with ON Semiconductor, a leader in advanced semiconductors for power electronics applications,” said Greg Knight, President of GTAT. “We anticipate this agreement will support the rapid growth of SiC as the preferred semiconductor substrate material for power electronics applications.”
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