Trench MOSFET structure adopted instead of planar
8mΩ/150A rated 1200V half-bridge module


Using silicon carbide (SiC) in electric vehicle powertrains can improve power efficiency, density, and performance. In particular, as battery capacity increases, SiC elements enhance inverter efficiency, extending driving range.

Infineon Technologies AG announced on the 7th the launch of its EasyPACK module, which features CoolSiC automotive MOSFET technology. The new module is a 1200V half-bridge module with an 8mΩ/150A current rating.

The new modules, suitable for high-voltage/high-voltage DC-DC step-up converters, multiphase inverters, and high-speed switching auxiliary drives such as fuel cell compressors, are based on Infineon's SiC trench MOSFET structure. Compared to planar structures, the trench structure enables higher cell density. It also improves reliability by operating at low gate oxide field strengths.

CoolSiC automotive MOSFET technology is designed to minimize conduction losses under partial load conditions. This, combined with the low switching losses of SiC MOSFETs, can reduce losses during inverter operation by up to 60% compared to silicon IGBTs.

The EasyPACK CoolSiC automotive MOSFET module FF08MR12W1MA1_B11A, which meets the AQG 324 standard, has started volume production and will be available from distributors from September 2020.