Solar inverters based on SiC technology
Provides low reverse recovery and fast switching characteristics


ON Semiconductor today unveiled the NXH40B120MNQ, a full silicon carbide (SiC) power module family for solar inverter applications.

The NXH40B120MNQ full SiC power module family, consisting of 2-channel and 3-channel models, integrates a 1200 V, 40 mΩ SiC MOSFET and a 1200 V, 40 A SiC boost diode with dual boost stages.

The new product family is based on SiC technology and provides the low reverse recovery and fast switching characteristics required to achieve the high levels of power efficiency required in applications such as solar inverters.

The NXH40B120MNQ family is part of ON Semiconductor’s portfolio of power integrated modules (PIMs) based on wide-bandgap (WBG) technology, offering pin assignment and integration levels optimized for inverter designs.

SiC components provide low conductivity and switching loss, enabling higher switching frequencies and contributing to increased inversion efficiency. Additionally, it is designed for ease of use with solderless press-fit connections and customer-defined thermal interface options, depending on customer preference.

The NXH40B120MNQ family includes the 2-channel NXH40B120MNQ0 and 3-channel NXH40B120MNQ1 products, complemented by the NXH80B120MNQ0, a 2-channel module integrating a 1200 V, 80 mΩ SiC MOSFET and a 1200 V, 20 A SiC diode.

Meanwhile, Delta, a power and thermal management solutions company, announced that it has adopted the NXH40B120MNQ family to strengthen its M70A 70kW 3-phase PV string inverter portfolio.