New micropattern trench technology reduces static losses.


Infineon Technologies AG launched its TRENCHSTOP IGBT7 product in a discrete package on the 15th, following the EconoDUAL and Easy packages.

This product is available in a TO-247 package with a 650 V breakdown voltage and current ratings of 20 A, 30 A, 40 A, 50 A, and 75 A. Easily replace and parallelize previous-generation technology, the IGBT7 products are ideal for applications such as industrial motor drives, power factor correction (PFC), solar power, and uninterruptible power supplies (UPS).

TRENCHSTOP IGBT7 chips operate with significantly lower static losses by applying new micropattern trench technology. IGBT7 technology features very low saturation voltage (VCE(sat)) and integrates a 7th generation emitter-controlled (EC7) diode, resulting in a 150mV lower forward voltage (VF) drop and improved reverse recovery.

The 650V IGBT7 product has excellent controllability and EMI performance, and can be easily tuned to provide optimal dv/dt and switching losses suitable for the application.

In addition to providing the short-circuit robustness required for the application, it has also passed the HV-H3TRB (High Voltage, High Humidity, High Temperature Reverse Bias) test according to the JEDEC standard, demonstrating its robustness in high-humidity environments common in industrial applications.