Level Shift Gate Driver 6ED2230
Suitable for industrial drives and embedded inverters
350mA/650mA source and sink drive capability


Infineon Technologies AG announced today the expansion of its level-shifting EiceDRIVER™ portfolio with the launch of a 1200 V 3-phase gate driver.

Based on Infineon's silicon-on-insulator (SOI) technology, the 6ED2230 level-shift gate driver offers high negative VS transient voltage tolerance, latch-up immunity, fast overcurrent protection, and a monolithic integrated bootstrap diode, making it ideal for industrial drives and embedded inverter applications.

The 6ED2230 level-shift gate driver provides 350mA/650mA source and sink drive capability. An integrated dead-time function prevents shoot-through, and an overcurrent protection comparator provides fast, repeatable, and reliable switch protection with ±5% reference threshold accuracy. The built-in bootstrap diode provides fast reverse recovery with a rated resistance of 40Ω.

-100V negative VS transient voltage immunity with repetitive 700ns wide pulses supports excellent robustness and reliable operation. The low-side and high-side voltage supplies provide independent undervoltage lockout (UVLO) for safe operation. The unique DSO-24 footprint separates the low-side and high-side voltages on opposite sides of the package, further increasing clearance and creepage distances.

The EiceDRIVER 6ED2230 is available in a DSO-24 300 mil package. This DSO-28 sized package provides an ESD rating of 2kV according to the human-body model (HBM) with a small pin count.