Infineon Launches 600V MOSFETs Optimized for Static Switching
Published2021.04.20 16:14CoolMOS S7A meets high-power, high-performance battlefield requirements.
Reduced conduction loss with TSC QDPAK SMD package
On the 20th, Infineon Technologies launched the industrial 600V 'CoolMOS™ S7 10mΩ' product suitable for static switching applications and the automotive 'CoolMOS S7A' product.
The CoolMOS S7 10 mΩ is a 600 V superjunction MOSFET with low on-resistance (RDS(on)) making it suitable for applications requiring minimal conduction losses, such as solid-state relays (SSRs). The CoolMOS S7A meets the requirements for paralleling and replacing solid-state circuit breakers (SSCBs) and diodes in high-power, high-performance designs in automotive applications, such as high-voltage e-fuses, e-disconnect battery disconnect switches, and on-board chargers.
Both products adopt the top-side cooled (TSC) QDPAK SMD package, making them smaller than THD products such as TO-247. Switching from THD to QDPAK surface-mount products reduces height by 94%, thereby increasing power density. Additionally, low conduction losses enable designers to reduce heatsink size by up to 80% and increase current and voltage ratings without changing the form factor.
CoolMOS S7 10mΩ and S7A products are available for order now.
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