ROHM 650V SiC SBD Integrated IGBT
Losses at 67% level compared to existing IGBTs
Sample shipments start in March, mass production in December


With the recent widespread adoption of electric vehicles, requirements for power semiconductors installed in inverters and converters of various electronic components are becoming increasingly diverse in order to build more efficient systems. Accordingly, technological innovation is being pursued in both ultra-low-loss SiC power products, such as SiC MOSFETs and SiC SBDs, and conventional Si power products, such as IGBTs and SJ-MOSFETs.

On the 8th, ROHM developed the 'RGWxx65C series,' an IGBT with a 650V SiC SBD (Schottky Barrier Diode) embedded therein, for automotive and industrial devices handling high power, such as electric vehicle OBCs (On Board Chargers), DC/DC converters, and solar power generator power conditioners.

The RGW60TS65CHR, RGW80TS65CHR, and RGW00TS65CHR hybrid IGBT products employ ROHM's low-loss SiC Schottky barrier diodes as the IGBT freewheeling diodes and comply with AEC-Q101. Compared to conventional IGBTs, switching losses during ON have been significantly reduced. When equipped with an OBC, the loss is 67% compared to a conventional IGBT and 24% compared to an SJ-MOSFET.

Sample shipments of the new product family began in March of this year at 1,200 yen (excluding tax) per unit, and mass production is scheduled to begin in December at a rate of 20,000 units per month. In addition, ROHM supports rapid market introduction by providing application notes and SPICE models containing design methods for driving circuits necessary for evaluation and adoption through its official website.