A new IGBT product optimized for automotive traction inverters that is robust against short circuits and can operate up to 470VDC batteries has been launched.

Infineon Technologies (Korea CEO Seung-Soo Lee) announced on the 15th that it is launching a new EDT2 IGBT using the TO247PLUS package.

Optimized for automotive traction inverters, the EDT2 IGBT exceeds the automotive component industry standard AECQ101 with its high quality.

Therefore, the performance and reliability of the inverter system can be significantly improved. The EDT2 IGBT is based on automotive micro-pattern trench-field-stop cell technology already successfully used in many inverter modules in the EasyPACK™ 2B EDT2 or HybridPACK™ packages.

As a key requirement in applications, this product family is robust against short circuits.

Additionally, the TO247PLUS package provides greater creepage distances, facilitating design.

EDT2 technology is optimized for traction inverters, has a breakdown voltage of 750 V, can be used with batteries up to 470 VDC, and significantly reduces switching and conduction losses.

These discrete EDT2 IGBTs are rated at 120 A and 200 A at 100°C and feature extremely low forward voltage drop, reducing conduction losses by up to 13 percent compared to previous generation products.

The AIKQ200N75CP2 with 200A rated current is a best-in-class discrete IGBT available in the TO247PLUS package.

Therefore, fewer devices are required in parallel for a given power rating, increasing power density and reducing system cost.

In addition, the EDT2 IGBT features excellent parameter distributions: the difference between the collector-emitter saturation voltage (Vce(sat)) and the maximum value is less than 200 mV, and the difference between the gate threshold voltage (VGEth) is less than 750 mV.

Additionally, the thermal coefficient has a positive value. These advantages facilitate parallel operation, providing system flexibility and power scalability in the final design.

Additionally, these IGBT products feature excellent switching characteristics, low gate charge (QG), and a junction temperature (Tvjop) of 175°C.