Infineon Technologies (Korea CEO Seung-Soo Lee) has launched a new SiC semiconductor product that offers the best performance at a reliable, easy-to-use, and economical price.

Infineon announced on the 29th that it recently launched the CoolSiC™ 650V silicon carbide (SiC) MOSFET family.

These products are based on Infineon's advanced SiC trench technology and are available in a compact D2PAK SMD 7-pin package with .XT interconnection technology.

It is also suitable for high-power applications such as servers, telecommunications, industrial SMPS, rapid EV charging, motor drives, solar energy systems, energy storage, and battery formation.

The new products deliver improved switching performance at higher currents and 80% lower reverse recovery charge (Qrr) and drain-source charge (Qoss) compared to best-in-class silicon devices. Reduced switching losses enable high-frequency operation in smaller system sizes, resulting in higher efficiency and power density.

Trench technology is the foundation for superior gate oxide reliability, and its enhanced avalanche and short-circuit robustness ensures maximum system reliability even in harsh environments.

These SiC MOSFETs are suitable for topologies using repetitive hard commutation or for high-temperature and harsh operation. They exhibit excellent thermal behavior due to their very low temperature dependence of on-resistance (RDS(on)).

This new product, which supports a wide gate-to-source voltage (VGS) range of -5 V to 23 V and a 0 V turn-off VGS and a gate-source threshold voltage (VGS(th)) of more than 4 V, operates with general MOSFET gate driver ICs.

It also supports bidirectional topology and full dv/dt control, reducing system cost and complexity and facilitating integration.

.XT interconnection technology significantly improves package thermal performance, dissipating up to 30% more loss compared to standard interconnections.

The new CoolSiC MOSFET 650V D2PAK 7-pin (TO-263-7) is available for order now, further information is available on our website.