The M1H chip can be used in a variety of industrial applications, such as applications that must meet peak demands and ESS systems, and can be selected where high robustness and power density are considered.

Infineon Technologies AG announced on the 21st its new CoolSiC technology, the CoolSiC™ MOSFET 1200V M1H.

The advanced silicon carbide (SiC) chips will be available in a variety of popular Easy module families, as well as in discrete packages featuring XT interconnect technology. The flexible M1H chip is suitable for applications that must meet peak demand, such as inverters in solar energy systems, rapid EV charging, energy storage systems, and various industrial applications.

Recent advancements in CoolSiC base technology enable a wider gate operating range, improving on-resistance (impedance) for a given die size.

Additionally, the wider gate operating range provides high robustness against driver- or layout-related voltage peaks at the gate, even at high switching frequencies, without any limitations. M1H chip technology is available in a variety of package options, allowing design engineers to select the right product based on their needs for increased power density or enhanced application performance.

■ Improved power density with Easy modules

The widely used Easy product line has been enhanced with the M1H chip, further enhancing the Easy 1B and 2B modules. Furthermore, the Easy 3B module, featuring the new 1200V CoolSiC MOSFET, is also scheduled for release. The addition of a new chip size increases design flexibility and offers a diverse product portfolio. The M1H chip can be used to improve module on-resistance and enhance device reliability and efficiency.

A maximum junction temperature of 175°C increases power density with improved overload performance and enhances robustness to faults. Compared to the previously released M1, the M1H includes an internal RG, making it easy to optimize switching behavior and maintaining unchanged dynamic behavior.

■ Discrete package products with very low on-resistance The CoolSiC MOSFET 1200V M1H portfolio includes discrete devices with very low on-resistances of 7mΩ, 14mΩ, and 20mΩ in TO247-3 and TO247-4 packages. These devices are easy to design-in, feature a maximum negative gate-source voltage of -10V, offer advantages in gate voltage overshoot and undershoot, and include avalanche and short-circuit protection.

XT interconnect technology, already implemented in the D2PAK-7L package and now available in the TO footprint, improves heat dissipation by more than 30 percent compared to standard interconnects. This thermal advantage can increase output power by up to 15 percent and, by increasing switching frequency, reduce passive components in applications such as electric vehicle charging, energy storage, and solar power systems. This increases power density and reduces system cost.

XT technology reduces SiC MOSFET junction temperature without changing system operating conditions, improving power cycling performance and extending system life. These parts serve as important elements in applications such as servo drives.

Additional information on modules and discrete products is available at www.infineon.com/sic-mosfet.