Samsung Electronics announced on the 4th that it has developed the industry's first high-performance embedded flash memory based on the next-generation UFS 4.0 standard. The international semiconductor standards organization JEDEC approved the UFS 4.0 standard on May 3rd (local time in the United States).

UFS 4.0 can store and read data faster with a data transfer bandwidth of 23.2 Gbps, which is twice that of the existing UFS 3.1.

UFS 4.0 is expected to be widely adopted in mobile devices such as the latest smartphones, which require increased processing of high-resolution content and large-capacity mobile games, as well as in future automotive semiconductors and devices such as the metaverse.

Samsung Electronics has achieved industry-leading performance by incorporating its proprietary UFS 4.0 controller and 7th-generation V-NAND. Furthermore, sequential read and write speeds are 2x and 1.6x faster, respectively, than the previous generation (UFS 3.1). This product boasts a sequential read speed of 4,200 MB/s and a sequential write speed of 2,800 MB/s.

Energy efficiency has also increased significantly. Samsung Electronics' UFS 4.0 delivers sequential read performance of 6.0MB/s per 1mA, improving power efficiency by approximately 45% compared to existing UFS 3.1 products. Mobile devices equipped with UFS 4.0 memory can process more data with the same battery capacity.

Samsung Electronics applied Advanced RPMB (Replay Protected Memory Block) technology, which has 1.8 times improved performance, to safely protect important data such as users' personal information.

It is implemented in a compact package measuring 11mm wide, 13mm long, and 1.0mm high, enhancing the convenience of mobile device design and space utilization, and plans to provide up to 1TB of capacity.