TI Launches Ultra-small FemtoFET™ MOSFET Offering Lowest ON Resistance

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TI Launches Ultra-small FemtoFET™ MOSFET Offering Lowest ON Resistance

Published2013.11.13 15:02

TI Korea (CEO Kent Chon, www.ti.com/ww/kr ) November 11, 2013 – TI (CEO Kent Chon) announced the launch of the industry's smallest MOSFETs, providing low ON resistance for space-constrained handheld applications such as smartphones and tablets. The new FemtoFET™ MOSFET transistor family features an ON resistance of less than 100 mΩ in an ultra-small packaging size. (For more product information, sample orders, and SPICE models, please refer to www.ti.com/femtofet-pr-kr )

These three N-channel and three P-channel FemtoFET MOSFETs, available in LGA (land grid array) packages, can reduce board space by up to 40% compared to CSP (chip scale packaging). The CSD17381F4 and CSD25481F4 provide an on-resistance of less than 100 mΩ, which is approximately 70% lower than comparable products on the market. All of TI's FemtoFET MOSFET products provide ESD (electrostatic discharge) protection performance exceeding 4,000 V HBM (human body model). (Watch related video)

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These FemtoFET MOSFET families are new additions to TI’s NexFET power MOSFET portfolio for portable applications such as mobile phones, and representative devices in this portfolio include the CSD25213W10 P-channel and CSD13303W1015 N-channel. TI offers a comprehensive range of power management products designed to save board space and reduce power consumption in handheld applications, including the LP5907 high-current low-dropout (LDO) linear voltage regulator and the TPS65090 front-end power management unit (PMU).

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