A new MOSFET utilizing oxide-filled trench technology has been released. Its power efficiency and low EMI emissions promise applications in fields such as power conversion and motor control.

STMicroelectronics (ST) has introduced the STL320N4LF8 and STL325N4LF8AG 40V MOSFETs that reduce both on-resistance and switching losses and optimize body diode properties. ST emphasizes that these products ensure energy savings and low-noise performance in power conversion, motor control, and power distribution circuits.

The new 40V N-channel enhancement-mode MOSFETs utilize the latest generation STPOWER STripFET F8 oxide-filled trench technology. The STL320N4LF8 and STL325N4LF8AG offer maximum on-resistance (Rds(on)) of 0.8mOhm and 0.75mOhm, respectively, at a gate-source voltage (VGS) of 10V. This MOSFET is implemented in a space-saving and thermally efficient PowerFLAT 5x6 package with low Rds(on) per die area.

ST's advanced STripFET F8 technology ensures exceptional switching speeds with low device capacitance that minimizes dynamic parameters such as gate-drain charge, while increasing system efficiency. Designers can select switching frequencies from 600kHz to 1MHz, enabling the use of smaller capacitances and magnetic components to reduce circuit size, lower bill-of-materials (BoM), and increase the power density of the end application, ST explained.

Appropriate output capacitance and corresponding equivalent series resistance prevent drain-source voltage spikes and reduce dumpling oscillation time at turn-off. Furthermore, the STL320N4LF8 and STL325N4LF8AG emit extremely low electromagnetic interference (EMI) compared to similar devices on the market due to the soft recovery characteristics of the body diode. Furthermore, the diodes feature low reverse recovery charge, minimizing energy losses in hard-switching topologies.

The STL320N4LF8 and STL325N4LF8AG feature tightly controlled gate threshold voltage (VGS(th)) to enable narrow device-to-device diffusion, allowing multiple MOSFETs to be easily connected in parallel to handle increasing currents. It was also noted that it has short-circuit robustness, withstanding up to 1,000A (pulse of less than 10µs).

The STL320N4LF8 and STL325N4LF8AG are industrial-qualified and AEC-Q101-qualified STPOWER STripFET F8 MOSFET devices for computing, communications, lighting, general power-conversion applications, and battery-powered products, ST added.