Microchip Technology (Asia General Manager and Korea Representative Han Byung-don), a global leader in microcontrollers, mixed-signal, analog semiconductors, and Flash-IP solutions, expects that the launch of a simulator capable of testing silicon carbide (SiC) power solutions during the design phase will enable developers to rapidly evaluate solutions in power switching topologies before applying them to hardware designs.

Microchip announced on the 21st that it has launched the MPLAB® SiC power simulator to enable power design engineers to easily and quickly transition to SiC power solutions.

This simulator enables the rapid evaluation of Microchip's SiC power devices and modules across various topologies before applying the design to hardware.

Microchip’s MPLAB SiC Power Simulator is a PLECS (Piecewise Linear Electrical Circuit Simulation)-based software environment developed in collaboration with Plexim, and is a free online tool that does not require the purchase of a simulation license.

The MPLAB SiC Power Simulator accelerates the design process for various SiC-based power topologies, enabling customers to easily and quickly benchmark and evaluate SiC solutions starting from the design phase.

The MPLAB SiC power simulator not only provides useful benchmarking data but also comprehensive SiIt provides C-evaluation to reduce the time required for component selection, thereby shortening the time to market.

For example, it immediately shows simulation results such as the average power loss and peak junction temperature of the devices to a designer considering 25mΩ and 40mΩ SiC MOSFETs for use in a three-phase active front-end converter.

MPLAB SiC power simulators are essential for OEM designs for industrial applications such as electric vehicles, on/off-board charging, power supplies, and battery storage systems, as well as for power system design for e-mobility and sustainability.

Microchip's SiC portfolio includes the best power module packages that minimize parasitic inductance to less than 2.9 nH, and the industry's best 3.3 kV discrete MOSFETs and diodes that provide the highest rated current.

It also includes 700V, 1,200V, and 1,700V dies, discretes, and modules, as well as the AgileSwitch® product family and configurable digital gate drivers.

These microchip SiC devices achieve high robustness and performance, providing body diodes without performance degradation and gate oxides with a product lifespan of over 100 years. SiC technology provides higher system efficiency, power density, and temperature stability compared to IGBTs (Insulated-Gate Bipolar Transistors) in high-power applications.

Clayton Pilion, Vice President of Microchip’s Silicon Carbide Business Unit, said, “Customers pursuing SiC technology can now benchmark or select the Microchip SiC product best suited for their needs through the web-based MPLAB SiC Power Simulator. Microchip has invested in silicon carbide research for over 20 years, and based on this, we provide customers with a broad portfolio of SiC power solutions that can be designed alongside Microchip’s other companion devices.”