Infineon Technologies (Korea CEO Seung-soo Lee) has introduced a high-quality gallium nitride (GaN) portfolio that far exceeds JEDEC demand requirements, and is expected to be used in a variety of applications.

Infineon announced on the 1st that it has successfully integrated CoolGaN™ 600V HD-GIT (Hybrid-Drain-Embedded Gate Injection Transistor) technology into its own manufacturing facilities.

Infineon has now come to offer a portfolio of high-quality GaN devices with a comprehensive configuration to a wider market.

Infineon's GaN portfolio includes a wide range of discrete and highly integrated GaN devices that far exceed JEDEC lifetime requirements.

The new CoolGaN devices are optimized for a wide range of applications, from industrial SMPS for servers, telecommunications, and solar power to consumer applications such as chargers, adapters, motor drives, TVs/monitors, and LED lighting systems.

The CoolGaN discrete and IPS (integrated power stage) device portfolio provides the flexibility needed to meet the specific requirements of industrial applications compliant with JEDEC standards (JESD47 and JESD22).

Discrete CoolGaN GIT HEMT devices are available in DSO-20-85, DSO-20-87, HSOF-8-3, LSON-81, and TSON-8 packages at 42mΩIt is provided with various on-resistance (RDS(on),max) values of ~340mΩ.

The IPS solution is available in half-bridge and single-channel forms. The half-bridge solution integrates two GaN switches and is provided in a TIQFN-28 package with (2x) RDS(on),max values of 190mΩ to 650mΩ. The single-channel solution is provided in a thermally enhanced TIQFN-21 package with RDS(on),max values of 130mΩ to 340mΩ.

Infineon CoolGaN GIT technology features a unique combination of a robust gate structure, internal electrostatic discharge (ESD) protection, and excellent dynamic RDS(on) performance. By fully leveraging the intrinsic properties of GaN, it provides an excellent FoM (Figure of Performance) compared to Si technology, including a breakdown field 10 times higher, electron mobility 2 times higher, output charge 10 times lower, zero reverse recovery charge, and gate charge with 10 times lower linear output capacitance (COSS).

These technical features provide significant design advantages, such as extremely low RDS(on), improved efficiency of resonant circuits, the use of new topologies and current modulation, and fast, near-lossless switching.

CoolGaN 600V GIT discrete devices in various configurations are available in JEDEC standard-compliant packages with top- and bottom-sided cooling (TSC/BSC). The CoolGaN TSC power package is unrivaled in the market and meets high power requirements. By utilizing these devices, designers can design compact and lightweight products with high power density, increase energy efficiency, and lower total system costs.

In addition, it ensures exceptional robustness and long-term reliability in accordance with Infineon's quality standards, enabling reduced operation and maintenance costs for energy-intensive applications.