Switching losses are down 25% compared to the first generation, but system size and power density are up.
Stable turn-off achieved at VGS = 0V… System cost and complexity reduced

Infineon Technologies (hereafter Infineon) has introduced an automotive SiC MOSFET that boasts best-in-class switching performance with 25% lower switching loss compared to the first generation.

Infineon announced on the 26th that it is launching a new generation of automotive 1200V CoolSiC™ MOSFETs using TO263-7.

Infineon's newly launched SiC MOSFETs enable high power density and efficiency in onboard charger (OBC) and DC-DC applications, enabling bidirectional charging while significantly reducing system costs.

This product boasts best-in-class switching performance with 25% lower switching loss compared to the first generation, enabling high-frequency operation, reducing system size and increasing power density.

A stable turn-off at VGS = 0 V is achieved without the risk of parasitic turn-on due to a gate-source threshold voltage (VGS(th)) of more than 4 V and an extremely low Crss/Ciss ratio.

This allows single-supply operation, reducing system cost and complexity, and the new product features low on-resistance (RDS(on)) characteristics, reducing conduction losses over the full temperature range of -55°C to 175°C.<br />
Additionally, the application of improved diffusion soldering chip mounting technology (.XT technology) significantly improves package thermal performance, reducing SiC MOSFET junction temperature by up to 25% compared to the first generation.

In addition, it meets the requirements of 800V systems with a creepage distance of 5.89 mm and reduces coating work.

Infineon offers a variety of RDS(on) options to meet diverse application needs, including the market's only 9mΩ type in the TO263-7 package.