April 1, 2014, Seoul, Korea – Freescale Semiconductor (NYSE: FSL, Country Manager for Korea Yeon-Ho Hwang), a global leader in RF (radio frequency) power transistors, today announced the first 2W integrated power amplifier that operates from a 5V power supply and provides a gain of over 40dB to support all frequency bands between 1500MHz and 2700MHz. This component supports all mobile communication standards operating at these frequencies, including GSM, 3G, 4G, and LTE.

Freescale’s all-purpose high-gain MMZ25333B is suitable for front-end amplifier and pre-driver applications in macro base stations, as well as end-end applications in small cells. The PA’s ultra-high performance and integration capabilities help customers reduce component counts, streamline the supply chain, and optimize costs. Additionally, since the device can be used across multiple platforms and frequency bands, inventory in the production department can be simplified through reuse across multiple projects.

"With the announcement of this new product, Freescale has achieved another industry-first that provides a competitive advantage to its customers," said Ritu Favre, Executive Vice President and General Manager of Freescale's RF Business Unit. "There is no other amplifier that supports the critical 1500-2700 MHz range in wireless communications and meets 2W output power and gain of over 40dB. This is a leading device that only a global RF market leader can provide."

The MMZ25333B is a multi-stage power amplifier based on InGaP GaAs HBT technology and is supplied in an industry-standard 4mm QFN package. Mass production samples of the MMZ25333B are currently being supplied, and mass production of the device is scheduled for April 2014.