This page was machine-translated and may differ from the original. View original
Launch of New 1Mb and 4Mb EXCELON™ F-RAM Memory
Infineon Technologies (Korea CEO Seung-Soo Lee) is launching a memory that can reliably store data until the last moment before a car accident or a user-defined trigger event occurs, contributing to improving the reliability of event data recorders (EDRs) in vehicles.
Infineon today announced the launch of two new EXCELON™ F-RAM (Ferroelectric RAM) memory devices with densities of 1 Mb and 4 Mb.
The 1Mb device is the industry's first automotive-grade serial F-RAM.
The new device is AEC-Q100 Grade 1 qualified and supports an extended temperature range (-40°C to +125°C).
With the addition of these products, Infineon now offers a comprehensive portfolio of automotive F-RAM products with densities ranging from 4 Kb up to 16 Mb.
These devices deliver fast and reliable read/write performance at speeds of up to 50 MHz in SPI mode and up to 108 MHz in quad SPI (QSPI) mode, and boast an endurance of 10 trillion read/write operations, enabling data logging at 10 microsecond intervals for more than 20 years.
“The demand for data logging in automotive systems is rapidly increasing,” said Ramesh Chettuvetty, Vice President, RAM Solutions at Infineon. "The increasing use of electronic systems and industry regulations are encouraging the use of high-reliability non-volatile memory in engine control, battery management, and airbag safety systems. As the number of applications requiring data logging increases, so does the need for memory densities suited to specific use cases. Infineon aims to provide flexibility in product selection to meet the memory architecture requirements of diverse system designs," he said.
EXCELON F-RAM's zero-latency write capability allows system data to be captured and recorded until the very last moment before an accident or user-defined trigger event occurs. These devices utilize a serial (SPI/QSPI) interface, feature F-RAM's unique ultra-low power consumption, operate from 1.8V to 3.6V, and are available in a standard 8-pin SOIC package. Infineon F-RAMs are designed for exceptional endurance and to retain data for over 100 years after power failure.
본 기사에 대한 정정·반론·추후보도 청구는 보도 청구 안내를, 그간 게재된 보도문은 정정·반론보도 모아보기를 참고해 주세요.
















