Responding to the increase in electricity consumption due to the shift in megatrends
Minimizing energy loss in ESS and battery formation solutions

Infineon Technologies (hereinafter Infineon) has introduced a SiC-based MOSFET capable of responding to increased electricity consumption resulting from the transition to megatrends such as digitalization, urbanization, and e-mobility.

Infineon announced on the 28th that it has launched the CoolSiC™ MOSFET 650V family using TOLL (TO leadless) packaging.

The new SiC MOSFET further strengthens Infineon's comprehensive CoolSiC portfolio and is designed to minimize losses, achieve maximum reliability, and enhance ease of use in applications such as servers, telecom infrastructure, energy storage systems, and battery formation solutions.

CoolSiC 650V high-performance trench-based SiC MOSFETs are available in various configurations to support a variety of applications.

The new product family of JEDEC-certified TOLL packages features low parasitic inductance, enabling high switching frequencies, low switching losses, excellent thermal management, and automated assembly.

With a compact form factor, board space can be used efficiently and effectively, enabling system designers to achieve excellent power density.

650V CoolSiC MOSFETs in harsh environments It has excellent reliability and is suitable for topologies that perform repeated hard rectification.

The built-in innovative .XT interconnect technology improves the thermal performance of the device by lowering thermal resistance (Rth) and thermal impedance (Zth).

In addition, for robustness against parasitic turn-on, it provides a threshold voltage (VGS(th)) of 4V or higher, a robust body diode, and the industry's strongest gate oxide (GOX), resulting in a very low failures-in-time (FIT) rate.

Generally, a cutoff voltage of 0V (VGS(off)) is recommended to simplify the driving circuit (unipolar driving), but this new product family supports a wide range of VGS voltages from -5V (turn-off) to 23V (turn-on).

This enhances ease of use, enables compatibility with other SiC MOSFETs and standard MOSFET gate driver ICs, and lowers system and production costs and shortens time-to-market based on reliability, automated assembly, and low system complexity.