July 7, 2014, Seoul – STMicroelectronics (ST), a global semiconductor company serving customers across a wide range of electronic applications, has launched a new family of Field-Effect Rectifier diodes (FERD). This new family offers an unrivaled trade-off between low forward voltage drop (VF) and low leakage current (IR). Consequently, it is possible to meet stringent energy efficiency standards in product designs, such as battery chargers or laptop adapters, without using synchronous rectification techniques.

Standards such as Energy Star 6.0 evaluate energy efficiency by applying Schottky diodes to battery chargers or laptop adapters. Synchronous rectification offers excellent performance but comes at a significant cost. ST’s FERD product family is an attractive alternative because it meets the energy-saving standards applied to offline switch-mode power supplies while being about 30% cheaper than synchronous rectification kits.

FERD diodes are available in ranges from 15A to 2x30A and from 45V to 60V. Based on ST's patented technology, they achieve best-in-class VF/IR for a given silicon surface area. For example, a 30A chip utilizing FERD technology reduces forward voltage drop by approximately 140mV compared to a conventional 30A Schottky diode, while leakage current does not increase.

Through low forward voltage drop and enhanced leakage current technology, overall current flow is improved, thereby increasing the power output from the entire package. This offers the advantages of faster charging of smartphones and tablets, reduced size and weight of laptop chargers, and increased device lifespan due to the low operating temperature of the FERD diode.

FERD technology is highly suitable for automotive applications such as freewheeling and battery polarity prevention, as well as applications and systems in other sectors such as OR-ing in communication power supplies and rectification in industrial systems, and FERD chips are supplied in various voltage and current grades to meet market needs.