July 16, 2014, Seoul – Infineon Technologies (Korea CEO Lee Seung-soo) announced that it supplies a total of 8 RF components including LTE low-noise amplifiers (LNA), quad LNA bank, GPS LNA, and SPDT RF switches to Samsung's Galaxy S5.

Philipp von Schierstaedt, Vice President and Head of RF and Protection Devices Business at Infineon Technologies, stated: "The smartphone market is advancing at a remarkable pace of innovation. To succeed in this market, we must be able to rapidly deliver products with higher levels of integration in smaller form factors. We are delighted that Infineon can contribute to leading companies like Samsung in providing users with reliable services and feature-rich products."

Infineon's LTE LNA and quad LNA bank products enable maximum utilization of LTE communication standards by improving smartphone data speeds by up to 96 percent compared to solutions that do not use LNA. The GPS LNA product effectively prevents interference from other signals present within the terminal, thereby achieving reliable navigation functionality. Additionally, Infineon's SPDT RF switch products ensure that RF signals are reliably transmitted along designated paths.

Infineon offers a comprehensive product portfolio including RF devices, TVS diodes, silicon microphones, and power management IC products for use in mobile devices and cellular infrastructure.