A new silicon carbide (SiC) product that can increase power without increasing current with a breakdown voltage of 2,000 V is expected to find wide use in energy storage devices and electric vehicle charging applications.

Infineon Technologies AG (Korea CEO Seung-Soo Lee) announced on the 25th that it is launching a new CoolSiC™ MOSFET 2000 V product family using the TO-247PLUS-4-HCC package.

The new products address designers' needs to increase power density without compromising system reliability under demanding conditions involving high voltages and high switching frequencies.

CoolSiC MOSFETs provide higher DC-link voltage, allowing power to be increased without increasing current.

The new product is the industry's first discrete SiC (silicon carbide) device to provide 2,000 V breakdown voltage and is available in a TO-247PLUS-4-HCC package with 14 mm creepage and 5.4 mm clearance.

These devices have low switching losses, making them ideal for solar (such as string inverters), energy storage systems and electric vehicle charging applications.

The CoolSiC MOSFET 2000 V family is ideal for high DC link systems up to 1500 VDC.

Compared to 1,700V SiC MOSFETs, these products are 1,500It also provides sufficiently high overvoltage margin for VDC systems.

These CoolSiC MOSFETs set a new industry benchmark with a gate threshold voltage of 4.5 V and feature a robust body diode for hard commutation.

It also features .XT bonding technology to provide the highest level of thermal performance and excellent moisture resistance.

The CoolSiC MOSFET 2000 V family is available now and an evaluation board, EVAL-COOLSIC-2KVHCC, is also available.

Developers can use this board as a precise and universal test platform to evaluate all CoolSiC MOSFET and diode 2000 V products as well as the EiceDRIVER™ compact single-channel isolated gate driver 1ED31xx family in double pulse test or continuous PWM operation. More information is available at www.infineon.com/coolsic-mosfet-discretes.