Manufactured using a high-performance 8-inch in-house foundry process at factories in Malaysia and Austria.
Launch of two product lines: 650V and medium-voltage, specializing in GaN devices ranging from 40V to 700V.

In the GaN device market, which is expected to grow at a compound annual growth rate of 46% over the next five years (Yole Group forecast), Infineon Technologies (FSE: IFNNY) announced that it will further expand the strengths and production capacities of CoolGaN and is introducing a new CoolGaN product family as part of this plan.

Infineon announced on the 4th the launch of a new generation of high-voltage and medium-voltage CoolGaN™ product families.

Customers now have access to GaN devices ranging from 40 V to 700 V for a wide range of applications.

Both product lines are manufactured using a high-performance 8-inch in-house foundry process at our plants in Kulim (Malaysia) and Villach (Austria).

The new 650V G5 family is ideal for applications such as consumer, data center, industrial, and solar.

These products are Infineon's next-generation high-voltage products based on GIT (gate injection transistor).

The second new product family, manufactured on the 8-inch process, is the mid-voltage G3 devices, which include 60V, 80V, 100V, and 120V CoolGaN transistors and 40V bidirectional switches (BD).S) Includes products.

Medium voltage G3 products are suitable for motor drive, telecom, data center, solar and consumer applications.