ST is one of the leading companies in the development of SiC power semiconductors with excellent durability and efficiency. The 1200V SCT20N120 maintains an on-resistance (RDS(ON)) of over 290 mΩ until the maximum operating junction temperature reaches 200°C. Thanks to stable turn-off energy (Eoff) and gate charge (Qg), the product family's switching performance is also stable within this temperature range. As a result, low conduction and switching losses, combined with extremely low leakage current, allow for simplified thermal management and maximized stability.

ST's silicon carbide MOSFETs offer low energy loss and enable switching frequencies up to three times higher than those of silicon IGBTs of similar speed. This allows developers to specify smaller external components, thereby reducing size, weight, and manufacturing costs. The SCT20N120 also has excellent high-temperature durability, which can simplify the design of cooling systems for applications such as power modules for electric vehicles.

The SCT20N120 can operate reliably up to 200°C with the added thermal efficiency of ST's proprietary HiP247™ package, while maintaining compatibility with the industry-standard TO-247 power package outline.

SCT20N120 is currently in mass production, and the price starts at $8.50 for orders of 1,000 units.