ON Semiconductor, a leader in intelligent power and sensing technologies, is strengthening its global manufacturing capabilities for gallium nitride (GaN) power devices.

Onsemi announced on the 4th that it has signed a strategic MOU with Innoscience.

This collaboration aims to enable mass production and global supply of low- and medium-voltage GaN devices, including those in the 40-200 V product range, providing high-efficiency solutions for the industrial, automotive, communications infrastructure, consumer, and AI data center markets.

GaN semiconductors feature fast switching speeds, small form factors, and low energy losses, enabling them to deliver more power in a smaller space.

On the other hand, introduction in the low-voltage and medium-voltage sectors has been delayed due to limited supply and manufacturing capacity.

Through this collaboration, Onsemi and InnoScience plan to overcome these limitations and rapidly supply large-scale, optimized GaN solutions to key markets.

Application areas include: △Industrial robotics motor drives and solar microinverters △Automotive DC-DC converters and rectifiers △Point-of-Load (PoL) converters for communication infrastructure △Consumer power supplies, adapters, audio, lightweight e-mobility △Intermediate bus converters and battery backup devices for AI data centers.

Onsemi is a customerIt provides three core values: △shortened time to market △scalable manufacturing △lower system cost.

Onsemi's system expertise and packaging experience, combined with Innoscience's proven GaN production capabilities, enables rapid prototyping and mass-market scalability, while optimized packaging and streamlined thermal management reduce total system cost.

“With the demand for power soaring, GaN offers higher efficiency, smaller size, and lower energy loss,” said Antoine Jalabert, vice president of corporate strategy at ON Semiconductor. “This collaboration will enable us to build the industry’s largest GaN production base, accelerating its adoption in key applications.”

“GaN technology is essential for power savings and CO₂ emission reduction,” said Yi Sun, Senior Vice President of InnoScience’s Products and Engineering Division. “Through our collaboration with ON Semiconductor, we will expand global adoption and build a system integration platform.”

According to market research, GaN is expected to account for approximately 11% of the global power semiconductor market by 2030, growing to $2.9 billion.

The compound annual growth rate (CAGR) is expected to reach 42% between 2024 and 2030. This collaboration strengthens ON Semiconductor's intelligent power portfolio, encompassing silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), and lays the foundation for providing optimal power systems across AI data centers, automotive, industrial, and consumer applications.

Onsemi plans to begin supplying GaN samples in the first half of 2026.