Paul Leonard, Vice President and General Manager of ON Semiconductor’s Power Devices Business Unit, stated, “GaN transistors are a very important and suitable solution for various applications where efficiency and power density are critical, as well as for switching power supplies.” He added, “As more engineers recognize the advantages of gallium arsenide devices, the demand for products based on them is increasing rapidly, and both companies will further accelerate the development of related new products to expand related applications.”

Two new products, the NTP8G202N (TPH3202PS) and NTP8G206N (TPH3206PS), with ON resistance values of approximately 150 and 290 milliohms, are provided in a TO-220 package optimized for easy mounting on circuit boards used by customers. Both 600V-rated products comply with JEDEC standards and are supplied under a mass production system.

The NCP1397GANGEVB (TDPS250E2D2) evaluation board is provided as a complete reference design for customers to run and evaluate GaN cascade transistors when designing power circuits. This evaluation board provides customers with a smaller footprint and lower efficiency than power supplies using conventional components.

The boost stage has an efficiency of approximately 98 percent and utilizes an NCP1654 power factor correction controller. The LLC DC-DC stage uses an NCP 1397 resonant mode controller to provide a full-load efficiency of approximately 97 percent. This performance operates at frequencies of 200+ kHz and meets EN55022 Class B EMC requirements. More details are available on the ON Semiconductor website.

ON Semiconductor is exhibiting its products at the Applied Power Electronics Conference 2015 (APEC 2015), held in Charlotte, North Carolina, USA, from March 15 to 19. GaN-based devices, Current Control mode LLC power supplies, and automotive motor drivers are on display at ON Semiconductor (Booth No.: 407) and Transform (Booth No.: 1317).