ACM Research has shipped its first Plasma Enhanced Chemical Vapor Deposition (PECVD) SiCN system, targeting advanced semiconductor back-end-of-line (BEOL) and advanced packaging processes, to a major semiconductor manufacturer. Amid rising demands for thin film uniformity and interface control in fine wiring and next-generation integration processes, ACM is expanding its related equipment portfolio by featuring a 3-station rotary deposition structure.

ACM announced on May 20 that it shipped its first PECVD SiCN system to a major semiconductor manufacturer. This equipment is a new addition to the Saturn series of ACM's planetary product family and is scheduled to enter field verification procedures after meeting the customer's process specifications at the Lingang Research Institute.

SiCN thin films are utilized in advanced wiring processes for copper oxidation inhibition, copper diffusion barriers, and etch stop layers. As logic semiconductors become miniaturized and wiring structures become more complex, there is an increasing demand for particle control, plasma stability, and interface layer control.

The scope of SiCN application is also expanding in advanced packaging. In next-generation integration processes such as wafer-level bonding, SiCN plays a role in enhancing integration reliability and suppressing metal ion diffusion based on its adhesion, bonding energy, and dense thin film characteristics.

ACM has applied a rotary deposition structure to this equipment, dividing the process into three stations within a single reaction chamber. Each station is designed to sequentially deposit a portion of the total film thickness to control gas flow, interface layer formation, and film uniformity across the entire wafer surface.

In addition, 'One Station, One RF' control technology was applied, featuring a dedicated RF system for each station. This allows for independent adjustment of plasma conditions for each station, focusing on enhancing process stability and consistency between stations.

The system supports the PECVD SiCN process for advanced BEOL processes of 55 nanometers or less. It is configured for 300mm wafer processes and features a maximum process temperature of 400 degrees, four load ports, and three process chambers to enhance wafer transfer efficiency and process operational flexibility.