Infineon Launches Smart Power Stage TDA235E5·TDA235E0 for AI Accelerators
Published2026.09.15 10:11
The two products integrate OptiMOS™ 6 MOSFET and dual-phase driver IC into a 6×6×0.8mm³ package to achieve power density exceeding 2A/mm², the company stated.
The company explained they can be applied not only to next-generation AI xPU accelerators but also to data center server CPUs.
Supporting both lateral and vertical power delivery configurations, they secure the design flexibility required during the industry's transition to vertical power module architecture.
As processor socket power consumption increases and the limitations of air cooling become apparent, the company forecasts growing demand in this area.
Furthermore, when combined with Infineon's digital multiphase controllers, they support multi-rail architecture, thereby contributing to shortened development cycles for AI server platforms.
Infineon pursues a policy of providing scalable solutions to data center customers by combining the characteristics of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN).
Engineering samples of both products are currently being provided for customer evaluation.
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