SiC MOSFET-based electric powertrain improves efficiency and driving range

Rohm's silicon carbide (SiC) power semiconductors are being applied to BMW's next-generation electric vehicle platform. The technology is expected to enhance next-generation electric vehicle performance by improving energy efficiency of the electric powertrain.

Rohm announced on the 18th that its SiC power devices have been adopted in the BMW Group's next-generation electric vehicle platform, 'Neue Klasse'.

Neue Klasse is the core platform of BMW's next-generation electrification strategy. Rohm's SiC power devices are applied to the electric powertrain system to support high efficiency, high performance, and high reliability.

Supporting electric vehicle efficiency improvements

SiC power semiconductors are a technology that can reduce energy loss occurring in the power conversion process, and are being utilized to extend the driving range of electric vehicles and improve charging performance.

Rohm explained that the SiC power devices applied to BMW are designed to support core power electronics functions while delivering stable performance in vehicle operating environments.

Through this, it can contribute to extending the driving range and charging efficiency of electric vehicles as well as optimizing overall vehicle energy efficiency.

Strengthening automotive electrification market strategy

Rohm has been developing and manufacturing automotive power semiconductors for an extended period and continues to expand its SiC-based product lineup as the electric vehicle market expands.

The company stated its plan to strengthen collaboration with global automotive manufacturers and Tier 1 component suppliers to address mobility electrification and decarbonization.

Wolfram Harnack, president of ROHM Semiconductor GmbH, stated, "The adoption of Rohm's SiC MOSFET in BMW Group's Neue Klasse sixth-generation technology is a result of recognition of our technological capabilities in the automotive power electronics field."