July 31, 2015, Seoul – STMicroelectronics (ST), a global semiconductor company serving customers across a wide range of electronic applications, has launched the new M Series 650V IGBT. This new product is a fast and cost-effective solution that can increase efficiency in design for HVAC motor drives, Uninterruptible Power Supplies (UPS), solar power converters, as well as all power converter applications operating up to 20 kHz in hard-switching circuit topologies.

The M Series IGBTs are manufactured using ST’s third-generation Trench-Gate Field-Stop (TGFS) low-loss technology, which achieves the best balance between conduction and switch-off losses through a combination of a new trench gate and a specially designed PNP vertical structure, thereby improving the overall performance of the device. Features such as a short-circuit withstand time (SCWT) of at least 6 microseconds (µs) at a starting junction temperature of 150°C, an extended maximum operating junction temperature of 175°C, and a wide Safe Operating Area (SOA) extend the service life and improve reliability for high-power applications.

This new product is available in a package such as next-generation free-wheeling diodes, optimized for fast recovery while maintaining a high level of softness and low forward voltage drop. These packages offer excellent EMI protection while reducing switch-on losses. Additionally, the compact parameter layout and VCE(sat) positive temperature coefficient (PTC) enable safe parallel operation even under high power conditions.

The key features of the M series are as follows:

The M series complements the 650V IGBT HB series for high-frequency (up to 60 kHz) industrial applications, with rated currents of 10A and 30A available in various power packages including TO-220, D2PAK, and TO-247 LL long-lead. All devices are currently in mass production, and the price of the 10A STGP10M65DF2 in the TO-220 package starts at $1 for orders of 1,000 units.