New 100V MOSFETs Added to the PowerTrench® MOSFET Portfolio

Fairchild today launched the FDMS86181 100V shielded gate PowerTrench® MOSFET, the flagship member of its latest generation of 100V N-Channel Power MOSFETs, at APEC 2016.

The FDMS86181 is Fairchild's highest-performance next-generation PowerTrench MOSFET, delivering significantly improved efficiency, reduced voltage oscillation, and lower electromagnetic interference (EMI) for use in power supplies, motor drives, and other applications requiring a 100V MOSFET.


▲ Fairchild's FDMS86181 has significantly improved efficiency and reduced voltage oscillation.

Fairchild, the company that initially developed the PowerTrench MOSFET 25 years ago, said this latest generation of PowerTrench devices continues its leadership in MOSFET technology ahead of its competitors and enables it to meet customers' demanding system power requirements.

“Fairchild’s new 100V N-Channel FET represents a significant advancement over the industry’s leading previous generation PowerTrench MOSFETs, demonstrating significant advantages over the competition in nearly every performance category, from efficiency to reliability,” said Suman Narayan, vice president and general manager of Fairchild’s iFET business unit.

Key benefits of the new FDMS86181 include a 40% reduction in Rdson, which reduces conduction losses, and minimized gate charge (Q _g ), which reduces switching losses. The FDMS86181's exceptionally low Q _rr virtually eliminates voltage excursions that can lead to oscillations, enabling smaller or even elimination of snubbers in product designs while reducing EMI.

The company emphasized that this unique advantage of the FDMS86181 ( fairchildsemi.com/powertrench) allows designers to reduce both product size and bill of materials (BOM) cost.