3rd Generation 'Ultra Field Stop' Technology Based
Providing power efficiency for high-power switching systems

ON Semiconductor announced a new series of insulated gate bipolar transistors (IGBTs) utilizing its proprietary Ultra Field Stop Trench technology.

The products released in these three models (NGTB40N120FL3WG, NGTB25N120FL3WG, and NGTB40N120L3WG) are designed to deliver high levels of operational performance to meet the precise requirements of modern switching applications.

These 1200V devices provide industry-leading 'Total Switching Losses (Ets)' characteristics. Featuring a very wide and highly active 'field stop layer' and optimized 'co-pack' diodes, these products offer significant performance improvements compared to existing products.


The NGTB40N120FL3WG provides 2.7 millijoules (mJ) of Ets, and the NGTB25N120FL3WG provides 1.7mJ, with both devices having a VCEsat of 1.7V at their respective rated currents. The NGTB40N120L3WG is optimized for low conduction losses and provides a VCEsat of 1.55V and 3mJ of Ets at its rated current.

The newly released 'Ultra Field Stop' products are equipped with a high-speed recovery diode that provides a soft turn-off function while minimizing reverse recovery losses. NGTB25N120FL3WG and NGTB40N120FL3WG are optimized for uninterruptible power supplies (UPS) and solar inverters, while NGTB40N120L3WG is a motor drive critical application.

Asif Jakwani, Senior Director and General Manager of ON Semiconductor’s Power Devices Business Unit, said , “Our newly launched ‘Ultra Field Stop’ IGBT enhances power efficiency in demanding switching applications while reducing switching losses across a wide range of switching drive frequencies by providing a sweet spot function that ensures VCEsat and Ets are perfectly harmonized with a high-speed recovery diode. This technology delivers both the cost savings and reliable operation that engineers expect from IGBTs.”