마이크로칩 8월
This page was machine-translated and may differ from the original. View original

ADI Announces Silicon Switch Suitable for Wireless RF Front-Ends for Mobile Phones

Google 우선 소스Published2016.06.14 12:07
High-power (up to 44W) SPDT, reduced size and power consumption

Analog Devices (ADI) announced a high-power (up to 44W) single-pole double-throw (SPDT) silicon switch that enables designers to reduce hardware size and bias power consumption in cellular radio systems.

As next-generation communication infrastructure evolves to increase data capacity, wireless front-ends for mobile phones must be reduced in size and support faster speeds to meet the growing demand for data usage.



ADI's ADRF5130 switch meets this requirement by eliminating the need for additional components through a high level of integration. In addition, this switch operates on a single low-voltage supply that consumes significantly lower current compared to existing PIN-diode-based solutions, further reducing power consumption to an even more efficient level. The ADRF5130 is manufactured using silicon technology and is mounted in a small LFCSP SMT package measuring 4mm × 4mm.

ADRF5130 boasts an insertion loss of 0.6dB (typ), high isolation characteristics of 50dB, and excellent linearity of +68dBm in the 0.7GHz to 3.5GHz frequency band, and can handle a peak power of 44W in continuous operation mode.

All pins of this switch have an ESD level of 2000V or higher, and it integrates a high-speed CMOS-compatible control interface with a switching time of less than 1 us. In addition, its symmetric circuit architecture enables the switching of RF inputs in high-power applications.
본 기사에 대한 정정·반론·추후보도 청구는 보도 청구 안내를, 그간 게재된 보도문은 정정·반론보도 모아보기를 참고해 주세요.
명세환 기자
명세환 기자