SuperFET III MOSFET Family Announced, Equipped with EMI and Robustness
Suitable for high-performance products with demanding robustness and reliability requirements

Fairchild, which was acquired by ON Semiconductor, introduced the SuperFET® III family of 650V N-channel MOSFETs, a next-generation MOSFET.

This product family meets the higher power density, system efficiency, and outstanding reliability recently required by telecommunications, servers, electric vehicle (EV) chargers, and solar products.

The SuperFET III MOSFET family offers best-in-class reliability, low EMI, outstanding efficiency, and superior thermal performance, making it an ideal choice for high-performance applications. Thanks to a wide range of package options that complement these performance characteristics, product designers can exercise significant flexibility, particularly in designs with specified size and constraints.

"Regardless of the industry, our customers are striving to bring new products to market faster while seeking groundbreaking improvements in efficiency, performance, and reliability for each new product generation," said Jin Zhao, Vice President and General Manager of Fairchild's High Power Industry Division. "In designing the new SuperFET III MOSFET, we enabled the device to reduce BOM costs, shrink board space, and simplify product design to help customers achieve their key product goals."

SuperFET III technology delivers the lowest Rdson among all easy-run versions of Super Junction MOSFETs, demonstrating best-in-class efficiency. This is made possible by state-of-the-art charge balancing technology that reduces Rdson by up to 44% in the same package size compared to our previous SuperFET II.

Key elements of SuperFET III’s outstanding robustness and reliability are its best-in-class body diode and single-pulse avalanche energy (EAS) performance that is three times better than that of the most similar competitor products.

When the 650V SuperFET III is turned off, a lower peak drain-source voltage improves system reliability during low-temperature operation. This is because, generally, at a junction temperature of -25°C compared to room temperature, the breakdown voltage naturally drops to 5% and the drain-source peak voltage becomes higher at low temperatures.

These reliability advantages are particularly important in industrial sectors such as solar inverters, uninterruptible power supplies (UPS), and EV chargers that must withstand higher or lower external ambient temperatures. The SuperFET III MOSFET family is currently available in various package and parameter options.