Samsung Electronics Partners with SAP to Advance Next-Generation Memory Development
Published2016.09.30 09:48Proposing Optimal Solutions for Memory and CPU Configuration When Building Customer Systems
Samsung Electronics announced that it will operate a 'Joint Research Center' with SAP starting next month for research and development of next-generation in-memory platforms.
In-memory database technology significantly improves processing speed by storing ultra-large capacity data in the main memory that processes information from the central processing unit (CPU).
Samsung Electronics and SAP held an opening ceremony for the 'Joint Research Center' on the 29th at Samsung Electronics' Components Research Building (DSR) in Hwaseong, Gyeonggi Province, attended by Jeon Young-hyun, President of Samsung Electronics' Memory Business Division, and Adaire Fox-Martin, Chair of SAP Asia Pacific, among others.
Samsung Electronics, the number one memory market player, and SAP, a leading enterprise software company, agreed in 2015 to jointly develop the in-memory platform 'SAP HANA.' Through collaboration between Samsung Electronics' Memory Business Division and SAP Labs Korea, the SAP HANA development organization, the establishment of the research center was promoted.
To this end, the two companies signed a 'Memorandum of Understanding (MOU) for Next-Generation In-Memory Platform Development' in June for developing next-generation ultra-high-speed, high-capacity DRAM modules and in-memory technology, accelerating preparations for operating the 'Joint Research Center.'
The 'Joint Research Center' established at Samsung Electronics' Components Research Building (DSR) consists of a dedicated server room operating a small data center and offices where research and development personnel from both companies work. Before global customers implement 'SAP HANA,' the two companies plan to provide optimal solutions to customers through comprehensive support including pilot operations at the research center. Additionally, various evaluations for developing and implementing ultra-high-capacity memory for in-memory systems will be conducted.
In particular, the two companies have implemented a single-server 'SAP HANA' in-memory platform of up to 24TB by mounting a 128GB 3DS (3 Dimensional Stacking) module based on 20nm DRAM, and plan to further enhance next-generation system performance by mounting a 256GB 3DS module based on 10nm-class DRAM in the future.
Additionally, they plan to develop solutions that minimize system operating power consumption to enhance customers' IT investment efficiency. Jeon Young-hyun, President of Samsung Electronics' Memory Business Division, stated, "With 20nm-class DRAM mass production, we can now timely provide optimal solutions for SAP's next-generation in-memory systems," and emphasized, "We will further strengthen our technology leadership and continue to lead the 'ultra-high-capacity memory era.'"
Adaire Fox-Martin, Chair of SAP Asia Pacific, said, "SAP plans to develop next-generation in-memory solutions for customers using the SAP HANA platform together with Samsung Electronics," and added, "Through this collaboration, we have established a more comprehensive partnership with Samsung Electronics. This is part of our efforts to achieve innovation and support customers' successful business in the digital economy," emphasizing the significance of the collaboration.
Meanwhile, the two companies' strategy is to lead innovation in the global in-memory solutions market through joint research on next-generation memory and commercialization efforts.
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